DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...
This product is featured in EDN's Hot 100 products of 2016. See all 100 here. The world already consumes too much energy. Globally, as the middle class grows, even more energy will be required.
San Francisco, CA. Wolfspeed, a Cree Company and leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), touted several ...
Transphorm Inc. has unveiled reportedly the first 600 V GaN (Gallium Nitride)-based, low-profile PQFN products and expanded its product portfolio in the industry-standard TO220 packages. Transphorm ...
DB HiTek, a leading 8-inch specialty foundry, announced that it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process, a ...
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