Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is adding two new, ruggedized GaN power HEMTs (High Electron Mobility Transistors) to its industry-leading, 650-volt, high-power family of ...

Imec, a research and innovation center in nanoelectronics and digital technologies, has presented its latest research at the 2021 International Electron Devices Meeting (IEEE IEDM 2021). By ...

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power design ...

What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

The new parts go through NASA Level 1 or ESA Class 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications include battery ...